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Modelling of 4H-SiC VJFETS with self-aligned contacts

Zekentes, Konstantinos, Vassilevski Konstantin V., Stavrinidis Antonis, Konstantinidis Georgios, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyré Hervé, Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis, Dimitrios

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URI: http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242
Έτος 2016
Τύπος Πλήρης Δημοσίευση σε Συνέδριο
Άδεια Χρήσης
Λεπτομέρειες
Βιβλιογραφική Αναφορά K. Zekentes, K. Vassilevski, A. Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis, E. Vassakis, H. Peyre, N. Makris, M. Bucher, P. Schmid, D. Stefanakis, and D. Tassis, "Modelling of 4H-SiC VJFETS with self-aligned contacts," in 16th International Conference on Silicon Carbide and Related Materials, 2016, pp. 913-916. doi: 10.4028/www.scientific.net/MSF.858.913 https://doi.org/10.4028/www.scientific.net/MSF.858.913
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Περίληψη

Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtained on a series of fabricated self-aligned devices with two different channel lengths (0.3 and 1.1μm) and various channel widths (1.5, 2, 2.5, 3, 4 and 5 μm). For all the considered models I-V and C-V characteristics could be satisfactorily simulated.

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