Charge-based model for junction FETsCharge-based model for junction FETs
Peer-Reviewed Journal Publication
Δημοσίευση σε Περιοδικό με Κριτές
2019-09-022018enWe present a unified charge-based model for double-gate and cylindrical architectures of junction field-effect transistors (JFETs). The central concept is to consider the JFET as a junctionless FET (JLFET) with an infinitely thin insulating layer, leading to analytical expressions between charge densities, current, and voltages without any fitting parameters. Assessment of the model with numerical technology computer-aided design simulations confirms that holding the JFET as a special case of the JLFET is justified in all the regions of operation, i.e., from deep depletion to flat-band and from linear to saturation.http://creativecommons.org/licenses/by/4.0/IEEE Transactions on Electron Devices6572694-2698Jazaeri_et_al_IEEE_Trans. Electron Devices_65(7)_2018.pdfChania [Greece]Library of TUC2019-08-30application/pdf2.1 MBfree
Jazaeri, Farzan 1984-
Makris Nikolaos
Μακρης Νικολαος
Saeidi, Ali, 1973-
Bucher Matthias
Bucher Matthias
Sallese, Jean-Michel 1964-
Institute of Electrical and Electronics Engineers
Cylindrical gate all around junction field-effect transistor (JFET)
Double-gate FETs
Nanowire FETs
Power semiconductor FETs
Radiation-hard electronics
Vertical JFET (V-JFET)