Compact modeling of low frequency noise and thermal noise in junction field effect transistorsCompact modeling of low frequency noise and thermal noise in junction field effect transistors
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Conference Full Paper
2020-04-232019enThis paper presents a novel charge-based approach to modeling bias-dependent noise in junction field-effect transistors (JFETs). Low frequency noise as well as thermal noise aspects are modeled within the recent charge-based model of the double-gate (DG) JFET. For low frequency noise, mobility fluctuations according to the Hooge model is addressed. Thermal noise is expressed within the charge-based modeling approach. The models are validated with respect to TCAD simulations and show correct dependence over a range of gate and drain bias. A custom setup for low frequency noise measurement of JFETs is described. Noise measurements of n-JFETs are discussed, and the compact model is compared with the measurement.http://creativecommons.org/licenses/by/4.0/198-20149th European Solid-State Device Research Conference
Makris Nikolaos
Μακρης Νικολαος
Chevas Loukas
Χεβας Λουκας
Bucher Matthias
Bucher Matthias
Institute of Electrical and Electronics Engineers
Compact model
JFET
Junction field effect transistor
Low frequency noise
Semiconductor device measurement
Thermal noise