Generalized constant current method for determining MOSFET threshold voltageGeneralized constant current method for determining MOSFET threshold voltage
Peer-Reviewed Journal Publication
Δημοσίευση σε Περιοδικό με Κριτές
2021-04-082020enA novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).This work was supported in part by the Project INNOVATION-EL-Crete under Grant MIS 5002772.Αυτό το έργο χρηματοδοτήθηκε εν μέρει στα πλαίσια του Επιχειρησιακού Προγράμματος «Ανταγωνιστικότητα Επιχειρηματικότητα και Καινοτομία» Πράξη "Εθνική Υποδομή Νανοτεχνολογίας, Προηγμένων Υλικών και Μικρο-/Νανοηλεκτρονικής" - INNOVATION-EL-Crete με αριθμό MIS 5002772.http://creativecommons.org/licenses/by/4.0/IEEE Transactions on Electron Devices67114559–4562
Bucher Matthias
Bucher Matthias
Makris Nikolaos
Μακρης Νικολαος
Chevas Loukas
Χεβας Λουκας
Institute of Electrical and Electronics Engineers
Charge-based model
Constant current (CC) method
Edge conduction
MOSFET
Parameter extraction
Threshold voltage
Transconductance-to-current ratio