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application/pdfIEEEIEEE Transactions on Electron Devices;2018;65;7;10.1109/TED.2018.2830972Cylindrical gate all around junction field-effect transistor (JFET)double-gate FETsnanowire FETspower semiconductor FETsradiation-hard electronicsvertical JFET (V-JFET)Charge-based Model for Junction FETsFarzan JazaeriNikolaos MakrisAli SaeidiMatthias BucherJean-Michel Sallese
IEEE Transactions on Electron Devices2694 July 201876510.1109/TED.2018.28309722698
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