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Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/E21C281B-422F-47D0-9767-F95A62D5B5F8 | ||
| Year | 2022 | ||
| Type of Item | Conference Short Paper | ||
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| Bibliographic Citation | L. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, and M. Bucher, "A contribution to GaN HEMT modeling and parameter extraction including temperature dependence," in Proceedings of the 2022 IEEE Latin American Electron Devices Conference (LAEDC 2022), Cancun, Mexico, 2022, doi: 10.1109/LAEDC54796.2022.9908184. https://doi.org/10.1109/LAEDC54796.2022.9908184 | ||
| Appears in Collections |
The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs.
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