Institutional Repository
Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/EF86728B-A589-44E2-9113-83CF1A88FB86 | ||
| Year | 2024 | ||
| Type of Item | Diploma Work | ||
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| Bibliographic Citation | Georgios Vitsios, "Compact MOSFET model parameter determination for open-source low-power analog CMOS Integrated Circuit (IC) design", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2024 https://doi.org/10.26233/heallink.tuc.101400 | ||
| Appears in Collections |
The evolution of digital technologies has been rapid in recent years. Interestingly, the appearance of the use of open-source software but also hardware (“open-source silicon”) is being observed. This thesis is part of the development of open access computer-aided design (CAD) tools, with the aim of assisting the design of analog integrated circuits (ICs) in digital CMOS technology. The charge-based MOS transistor model, named sEKV, is used as a basis. This model covers the entire spectrum from weak to moderate and strong inversion, with special care for the velocity saturation phenomenon, in order to serve the needs of designing low-power analog circuits. The experimental data is drawn from an open access repository of IHP, an 130nm BiCMOS technology. The objective is to develop models of DC current and AC transconductances, covering all channel lengths and the entire temperature range from -40 ⁰C to 125 ⁰C. Particular emphasis is placed on current, transconductance, and the transconductance-to-current ratio, with an emphasis on the inversion coefficient. The models for both NMOS- and PMOS-type transistors are fully developed over the entire range of channel length and temperature. As a result, the model can cover efficiently and with a minimal parameter set the entire operating range of MOS transistors, as required for the design of analog integrated circuits.
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