Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
EN
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EL
| URI | http://purl.tuc.gr/dl/dias/E0F555C4-D220-40B9-81F3-A8E010B6AE56 | - |
| Αναγνωριστικό | https://doi.org/10.26233/heallink.tuc.103806 | - |
| Γλώσσα | en | - |
| Μέγεθος | 132 pages | en |
| Τίτλος | Verilog-A Based Implementation of a MOSFET Model for Analog Integrated Circuit | en |
| Δημιουργός | Gallego Velazquez Alba | en |
| Δημιουργός | Gallego Velazquez Alba | el |
| Συντελεστής [Επιβλέπων Καθηγητής] | Bucher Matthias | en |
| Συντελεστής [Επιβλέπων Καθηγητής] | Bucher Matthias | el |
| Συντελεστής [Μέλος Εξεταστικής Επιτροπής] | Gyftakis Konstantinos | en |
| Συντελεστής [Μέλος Εξεταστικής Επιτροπής] | Γυφτακης Κωνσταντινος | el |
| Συντελεστής [Μέλος Εξεταστικής Επιτροπής] | Morinigo-Sotelo Daniel | en |
| Εκδότης | Πολυτεχνείο Κρήτης | el |
| Εκδότης | Technical University of Crete | en |
| Ακαδημαϊκή Μονάδα | Technical University of Crete::School of Electrical and Computer Engineering | en |
| Ακαδημαϊκή Μονάδα | Πολυτεχνείο Κρήτης::Σχολή Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών | el |
| Περιγραφή | A technical report of the procedure to build a MOSFET model | en |
| Περίληψη | Recent advances in the field of analogue electronics have led to an increased demand for the creation of programmable models of analogue circuits. The present thesis sets out the development and implementation of a compact model of a MOSFET, based on the theoretical EKV model, and implemented using the Verilog-A language. The utilization of simulation and compilation environments, such as the open server OpenVAF and Ngspice, is instrumental in facilitating the effective execution of the work. The construction of a model that can perform the function of an nMOS or a pMOS nanometric operating in a saturated state is facilitated by these. In this model, physical dependencies such as temperature, channel length, and second-order effects are incorporated, ensuring the attainment of continuous expressions for all inversion regions. The model's behaviour is validated against experimental data by means of simulation, thus enabling the evaluation of parameters such as drain current, inversion coefficient, capacitances, transconductances, and response to thermal and flicker noise. This results in an accurate, compact and versatile model, which is suitable for supporting integrated analog circuits designs with a wide range of values for the inversion coefficient. | en |
| Τύπος | Διπλωματική Εργασία | el |
| Τύπος | Diploma Work | en |
| Άδεια Χρήσης | http://creativecommons.org/licenses/by/4.0/ | en |
| Ημερομηνία | 2025-07-10 | - |
| Ημερομηνία Δημοσίευσης | 2025 | - |
| Θεματική Κατηγορία | Analogue electronics and microelectronics | en |
| Βιβλιογραφική Αναφορά | Gallego Velazquez Alba, "Verilog-A Based Implementation of a MOSFET Model for Analog Integrated Circuit", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2025 | en |
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