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Design of a Low-Noise amplifier (RF LNA) for a 5G NR (New Radio) base station using GaN and FDSOI technology

Bountouraki Roussa-Despoina

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URI: http://purl.tuc.gr/dl/dias/70262754-54A6-4249-8B98-02A399F9E211
Year 2025
Type of Item Diploma Work
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Bibliographic Citation Roussa-Despoina Bountouraki, "Design of a Low-Noise amplifier (RF LNA) for a 5G NR (New Radio) base station using GaN and FDSOI technology", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2025 https://doi.org/10.26233/heallink.tuc.104094
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Summary

The continuously increasing demand for high data transmission rates in wireless communication systems such as 5G New (NR) necessitates the design of efficient RF Front End Modules (FEM). A particularly critical component on the receiver side is the Low Noise Amplifier (LNA), which amplifies weak signals received by the antenna while adding minimal noise. This work focuses on the detailed circuit design of an LNA with center frequency at 5GHz, intended for use in a 5G NR base station, utilizing two of the most promising technological platforms: 150nm GaN HEMT and 22nm CMOS FDSOI. In both implementations, a Cascode topology with Inductive Source Degeneration was employed to optimize performance and ensure stability. The FDSOI design achieved a NF of 0.9 dB and a gain of 21.5 dB, while the GaN HEMT design achieved an NF of 0.65 dB and a gain of 15.1 dB. The results highlight the advantages of each technology in the development of high-performance RF front-ends for advanced 5G applications.

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