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Electrical characterization of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs)

Koumpias Leonidas

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Summary

The increasing demands of modern electronic applications for high-performance power transistors operating at high frequency while maintaining compact size and high energy efficiency as well as high operating temperatures, have led to a growing interest in compound semiconductor devices with high electron mobility, such as GaN HEMTs (High Electron Mobility Transistors).This thesis presents a brief analysis of the structure and operation of the GaN HEMT device, as well as an overview of its wide range of applications, including RF power amplifiers (RF PAs), power inverters, high-speed switches, radar systems, and more. The primary objective of the study is the detailed characterization of GaN HEMT devices, produced at the Institute of Electronic Structure and Laser (IESL) at FORTH in Heraklion, Crete. An on-wafer characterization campaign is carried out at the Electronics Laboratory of the School of ECE at TUC, with precision measurements of current-voltage (IV) as well as capacitance-voltage (CV) types, over a large temperature range. This characterization enables the modeling of the devices based on the EPFL-HEMT model.Following this, advanced parameter extraction methods are presented for the charge-based HEMT model, such as the barrier capacitance Cb, the threshold voltage VTH, the slope factor n, the technology current I0, and the mobility μ. Furthermore, a statistical analysis is conducted on the behavior of identical HEMTs across a single wafer, providing reliable statistical data for the above key parameters. In conclusion, this characterization contributes to the potential future commercial exploitation of FORTH’s GaN HEMT technology.

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