Institutional Repository
Technical University of Crete
Technical University of Crete
EN
|
EL
| URI | http://purl.tuc.gr/dl/dias/E1728BC3-3934-45B8-AFEC-4FCC9F3C9382 | - |
| Identifier | https://doi.org/10.26233/heallink.tuc.22870 | - |
| Language | en | - |
| Extent | 43 pages | en |
| Title | Study of low frequency noise in High Voltage MOS transistor | en |
| Creator | Fellas Konstantinos | en |
| Creator | Φελλας Κωνσταντινος | el |
| Contributor [Thesis Supervisor] | Bucher Matthias | en |
| Contributor [Thesis Supervisor] | Bucher Matthias | el |
| Contributor [Committee Member] | Balas Costas | en |
| Contributor [Committee Member] | Μπαλας Κωστας | el |
| Contributor [Committee Member] | Koutroulis Eftychios | en |
| Contributor [Committee Member] | Κουτρουλης Ευτυχιος | el |
| Publisher | Πολυτεχνείο Κρήτης | el |
| Publisher | Technical University of Crete | en |
| Academic Unit | Technical University of Crete::School of Electronic and Computer Engineering | en |
| Academic Unit | Πολυτεχνείο Κρήτης::Σχολή Ηλεκτρονικών Μηχανικών και Μηχανικών Υπολογιστών | el |
| Description | Διπλωματική εργασία που παραδώθηκε στην σχολή ΗΜΜΥ Πολυτεχνείου Κρήτης για απόκτηση πτυχίου | el |
| Content Summary | HVMOSFETs find many different applications such as switching applications, input-output operations, voltage conversions, RF amplification etc. The effect of drift region on 1/f noise remained unclear until recently due to the difficulty of performing 1/f noise measurements under high drain voltages, on the order of tens of Volt. This is mainly due to the lack of adequate measurement equipment, which usually restricts low frequency noise to be measured up to just a few Volt, usually generated from batteries. A 1/f noise parameter extraction method for high-voltage (HV-)MOSFETs at 3V drain bias is presented in this thesis. In this region the overall noise is mostly dominated by the noise originating in the channel. The bias dependence of flicker noise, related to transconductance-to-current ratio, allows for an easy means to determine related noise parameters. Though measured data is limited, parameters related to carrier number fluctuation effect may be found. 50 V N and P-channel HV-MOSFETs are investigated for long as well as short channel lengths. The parameter extraction method is applied to a recently established 1/f noise model for HV-MOSFETs, showing a good agreement among model and experimental data. | en |
| Type of Item | Διπλωματική Εργασία | el |
| Type of Item | Diploma Work | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2014-10-07 | - |
| Date of Publication | 2014 | - |
| Subject | MOSFET | en |
| Subject | metal oxide semiconductor field effect transistors | en |
| Subject | mosfet | en |
| Bibliographic Citation | Konstantinos Fellas, "Study of low frequency noise in High Voltage MOS transistor", Diploma Work, School of Electronic and Computer Engineering, Technical University of Crete, Chania, Greece, 2014 | en |
| Bibliographic Citation | Κωνσταντίνος Φελλάς, "Study of low frequency noise in High Voltage MOS transistor", Διπλωματική Εργασία, Σχολή Ηλεκτρονικών Μηχανικών και Μηχανικών Υπολογιστών, Πολυτεχνείο Κρήτης, Χανιά, Ελλάς, 2014 | el |
Copyright © DIAS 2013
