Το work with title Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE† by Kallithrakas-Kontos Nikolaos, Katsanos Anastasios is licensed under Creative Commons Attribution 4.0 International
Bibliographic Citation
N. Kallithrakas-Kontos and A.A. Katsanos, "Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE" X-Ray Spectrom., vol. 23, no. 2, pp. 96-99, Mar.-Aprl. 1994. doi: 10.1002/xrs.1300230211
https://doi.org/10.1002/xrs.1300230211
The efficiency of a Ge(In) semiconductor x-ray detector was measured in the energy region 1‒25 keV using proton-induced x-rays from thick targets and from thin targets of standard thickness, and the results of the two calibration methods were compared. A proton energy of 2.00 MeV was used in an external beam facility. A model based on fundamental parameters (mass absorption coefficients, fluorescence yields and relative x-ray emission rates) was used to reproduce the experimental results.