Institutional Repository
Technical University of Crete
Technical University of Crete
EN
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EL
| URI | http://purl.tuc.gr/dl/dias/737BDAFB-9298-4074-9D47-ACB027B0C038 | - |
| Identifier | https://doi.org/10.1002/xrs.1300230211 | - |
| Identifier | https://onlinelibrary.wiley.com/doi/abs/10.1002/xrs.1300230211 | - |
| Language | en | - |
| Extent | 4 pages | en |
| Title | Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE† | en |
| Creator | Kallithrakas-Kontos Nikolaos | en |
| Creator | Καλλιθρακας-Κοντος Νικολαος | el |
| Creator | Katsanos Anastasios | en |
| Creator | Κατσανος Αναστασιος | el |
| Publisher | John Wiley and Sons | en |
| Description | Δημοσίευση σε επιστημονικό περιοδικό | el |
| Content Summary | The efficiency of a Ge(In) semiconductor x-ray detector was measured in the energy region 1‒25 keV using proton-induced x-rays from thick targets and from thin targets of standard thickness, and the results of the two calibration methods were compared. A proton energy of 2.00 MeV was used in an external beam facility. A model based on fundamental parameters (mass absorption coefficients, fluorescence yields and relative x-ray emission rates) was used to reproduce the experimental results. | en |
| Type of Item | Peer-Reviewed Journal Publication | en |
| Type of Item | Δημοσίευση σε Περιοδικό με Κριτές | el |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2015-10-12 | - |
| Date of Publication | 1994 | - |
| Subject | Ge(In) semiconductor | en |
| Bibliographic Citation | N. Kallithrakas-Kontos and A.A. Katsanos, "Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE" X-Ray Spectrom., vol. 23, no. 2, pp. 96-99, Mar.-Aprl. 1994. doi: 10.1002/xrs.1300230211 | en |
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