URI | http://purl.tuc.gr/dl/dias/8C751A60-2C73-4922-A2F2-6E38608D9356 | - |
Identifier | https://ieeexplore.ieee.org/document/7985942/ | - |
Identifier | https://doi.org/10.1109/ICNF.2017.7985942 | - |
Language | en | - |
Title | Statistical compact modeling of low frequency noise in buried-channel, native, and standard MOSFETs | en |
Creator | Mavredakis Nikolaos | en |
Creator | Μαυρεδακης Νικολαος | el |
Creator | Bucher Matthias | en |
Creator | Bucher Matthias | el |
Creator | Habaš Predrag | en |
Creator | Acović, Alexandre | en |
Creator | Meyer René | en |
Publisher | Institute of Electrical and Electronics Engineers | en |
Content Summary | In this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated with excellent results. More specifically, it covers the increase of noise deviation in weak inversion and generally its strong bias-dependence in larger devices while it also gives consistent results regarding the scaling of LFN variability. | en |
Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
Type of Item | Conference Full Paper | en |
License | http://creativecommons.org/licenses/by/4.0/ | en |
Date of Item | 2018-04-25 | - |
Date of Publication | 2017 | - |
Subject | Buried channel | en |
Subject | Compact model | en |
Subject | Low frequency noise | en |
Subject | MOSFET | en |
Subject | Native | en |
Subject | Variability | en |
Bibliographic Citation | N. Mavredakis, M. Bucher, P. Habas, A. Acovic and R. Meyer, "Statistical compact modeling of low frequency noise in buried-channel, native, and standard MOSFETs," in International Conference on Noise and Fluctuations, 2017. doi: 10.1109/ICNF.2017.7985942
| en |