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Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/EDF37EBB-CE96-41BF-9707-74A589088EAB | - |
| Identifier | https://ieeexplore.ieee.org/document/7986018/ | - |
| Identifier | https://doi.org/10.1109/ICNF.2017.7986018 | - |
| Language | en | - |
| Title | Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors | en |
| Creator | Nikolaou Aristeidis | en |
| Creator | Νικολαου Αριστειδης | el |
| Creator | Mavredakis Nikolaos | en |
| Creator | Μαυρεδακης Νικολαος | el |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Habaš Predrag | en |
| Creator | Acović, Alexandre | en |
| Creator | Meyer René | en |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | Low frequency noise (LFN) characteristics can limit the performance of conventional CMOS designs. In the context of this paper enclosed gate N- and P-MOS transistors will be examined regarding LFN mean value and its variability in various biasing conditions. In subthreshold region enclosed gate PMOS transistors show a significantly reduced LFN variability compared to the NMOS counterpart. Both devices present an improved noise performance. The LFN compact MOSFET model applied proved to be well suited to statistically model LFN in enclosed gate transistors. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2018-04-25 | - |
| Date of Publication | 2017 | - |
| Subject | Enclosed gate | en |
| Subject | Low frequency noise | en |
| Subject | Variability | en |
| Bibliographic Citation | A. Nikolaou, N. Mavredakis, M. Bucher, P. Habas, A. Acovic and R. Meyer, "Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7986018 | en |
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