Institutional Repository
Technical University of Crete
Technical University of Crete
EN
|
EL
| URI | http://purl.tuc.gr/dl/dias/07573443-AB28-4F1C-BB86-778C115FA01A | - |
| Identifier | https://ieeexplore.ieee.org/document/7954285/ | - |
| Identifier | https://doi.org/10.1109/ICMTS.2017.7954285 | - |
| Language | en | - |
| Title | Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Nikolaou Aristeidis | en |
| Creator | Νικολαου Αριστειδης | el |
| Creator | Mavredakis Nikolaos | en |
| Creator | Μαυρεδακης Νικολαος | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Coustans Mathieu | en |
| Creator | Lolivier, Jérôme 1978- | en |
| Creator | Habaš Predrag | en |
| Creator | Acović, Alexandre | en |
| Creator | Meyer René | en |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, with particular emphasis on weak inversion region. Enclosed gate transistors show an improved gate voltage mismatch in weak inversion. A compact MOSFET model for LFN and its variability, based on number fluctuation theory, is shown to cover well the behavior of either type of transistors. Lower levels of noise as well as lower variability of noise are observed in enclosed gate transistors. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2018-05-08 | - |
| Date of Publication | 2017 | - |
| Subject | LFN | en |
| Subject | Low Frequency Noise | en |
| Subject | RTN | en |
| Subject | Random Telegraph Noise | en |
| Subject | MOSFET | en |
| Bibliographic Citation | M. Bucher, A. Nikolaou, N. Mavredakis, N. Makris, M. Coustans, J. Lolivier, P. Habas, A. Acovic and R. Meyer, "Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs" in International Conference on Microelectronic Test Structures, 2017. doi: 10.1109/ICMTS.2017.7954285 | en |
Copyright © DIAS 2013
