Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
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| URI | http://purl.tuc.gr/dl/dias/56019A91-6189-4D3B-820C-7B49717AFE32 | - |
| Αναγνωριστικό | https://ieeexplore.ieee.org/document/7579563/ | - |
| Αναγνωριστικό | https://doi.org/10.1109/TED.2016.2608722 | - |
| Γλώσσα | en | - |
| Μέγεθος | 8 pages | en |
| Τίτλος | Charge-based compact model for bias-dependent variability of 1/f noise in MOSFETs | en |
| Δημιουργός | Mavredakis Nikolaos | en |
| Δημιουργός | Μαυρεδακης Νικολαος | el |
| Δημιουργός | Makris Nikolaos | en |
| Δημιουργός | Μακρης Νικολαος | el |
| Δημιουργός | Habaš Predrag | en |
| Δημιουργός | Bucher Matthias | en |
| Δημιουργός | Bucher Matthias | el |
| Εκδότης | Institute of Electrical and Electronics Engineers | en |
| Περίληψη | Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate-to-large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise. Carrier number and mobility fluctuations are considered as the main causes of LFN. While their effect on the bias-dependence of LFN has been well investigated, the way these noise mechanisms contribute to the bias-dependence of variability of LFN has been less well understood. LFN variability has been shown to be maximized in weak inversion (subthreshold), while increased drain bias also increases LFN variability. However, no compact model has been proposed to explain this bias-dependence in detail. In combination with the charge-based formulation of LFN, this paper proposes a new model for bias-dependence of LFN variability. Comparison with experimental data from moderately sized nMOS and pMOS transistors at all bias conditions provides insight into how carrier number and mobility fluctuation mechanisms impact the bias-dependence of LFN variability. | en |
| Τύπος | Peer-Reviewed Journal Publication | en |
| Τύπος | Δημοσίευση σε Περιοδικό με Κριτές | el |
| Άδεια Χρήσης | http://creativecommons.org/licenses/by/4.0/ | en |
| Ημερομηνία | 2018-06-28 | - |
| Ημερομηνία Δημοσίευσης | 2016 | - |
| Θεματική Κατηγορία | Charge-based model | en |
| Θεματική Κατηγορία | LFN | en |
| Θεματική Κατηγορία | Low Frequency Noise | en |
| Θεματική Κατηγορία | MOSFET | en |
| Θεματική Κατηγορία | Variability | en |
| Θεματική Κατηγορία | Weak inversion | en |
| Βιβλιογραφική Αναφορά | N. Mavredakis, N. Makris, P. Habas and M. Bucher, "Charge-based compact model for bias-dependent variability of 1/f noise in MOSFETs," IEEE T. Electron. Dev., vol. 63, no. 11, pp. 4201-4208, Nov. 2016. doi: 10.1109/TED.2016.2608722 | en |
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