Institutional Repository
Technical University of Crete
Technical University of Crete
EN
|
EL
| URI: | http://purl.tuc.gr/dl/dias/CE80F943-FCD0-4C9A-AF94-76E0719D05E3 | ||
| Year | 2016 | ||
| Type of Item | Conference Full Paper | ||
| License |
|
||
| Bibliographic Citation | N. Mavredakis and M. Bucher, "Compact model for variability of low frequency noise due to number fluctuation effect," in 46th European Solid-State Device Research Conference, 2016, pp. 464-467. doi: 10.1109/ESSDERC.2016.7599686 https://doi.org/10.1109/ESSDERC.2016.7599686 | ||
| Appears in Collections |
Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.
Copyright © DIAS 2013
