Institutional Repository
Technical University of Crete
Technical University of Crete
EN
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EL
| URI | http://purl.tuc.gr/dl/dias/52BED836-8BC8-476D-BB33-D94EA624EDD9 | - |
| Identifier | https://www.sciencedirect.com/science/article/pii/S0026269216000550?via%3Dihub | - |
| Identifier | https://doi.org/10.1016/j.mejo.2016.03.004 | - |
| Language | en | - |
| Extent | 7 pages | en |
| Title | A comprehensive analysis of nanoscale single- and multi-gate MOSFETs | en |
| Creator | Sharma Rupendra Kumar | en |
| Creator | Dimitriadis Charalabos A. | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Publisher | Elsevier | en |
| Content Summary | Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) and double-gate (DG) SOI MOSFETs is examined via extensive 3D device simulations. Well-designed DG MOSFETs attain higher values of cut-off frequency for both lower and higher drain currents, whereas triple-gate (TG) FinFETs offer higher intrinsic gain while compromising cut-off frequency. For longer channel lengths, SG MOSFETs show slightly higher cut-off frequency in comparison to multi-gate (MG) MOSFETs, whereas MG MOSFETs exhibit higher cut-off frequency for lower channel lengths. A unique figure of merit, gain transconductance frequency product (GTFP) for best trade-off among gain, transconductance, and speed is compared. Double-gate MOSFETs exhibit higher GTFP over a wide range of device scaling, thus remain a good candidate for analog/RF applications. Furthermore, the RF linearity performance of these devices has been examined. | en |
| Type of Item | Peer-Reviewed Journal Publication | en |
| Type of Item | Δημοσίευση σε Περιοδικό με Κριτές | el |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2018-10-12 | - |
| Date of Publication | 2016 | - |
| Subject | Analog/RF performance | en |
| Subject | ATLAS device simulator | en |
| Subject | Linearity | en |
| Subject | Multi-gate MOSFETs | en |
| Bibliographic Citation | R. K. Sharma, C. A. Dimitriadis and M. Bucher, "A comprehensive analysis of nanoscale single- and multi-gate MOSFETs," Microelectr. J., vol. 52, pp. 66-72, Jun. 2016. doi: 10.1016/j.mejo.2016.03.004 | en |
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