Institutional Repository
Technical University of Crete
EN  |  EL



My Space

A comprehensive analysis of nanoscale single- and multi-gate MOSFETs

Sharma Rupendra Kumar, Dimitriadis Charalabos A., Bucher Matthias

Simple record

Extent7 pagesen
TitleA comprehensive analysis of nanoscale single- and multi-gate MOSFETsen
CreatorSharma Rupendra Kumaren
CreatorDimitriadis Charalabos A.en
CreatorBucher Matthiasen
CreatorBucher Matthiasel
Content SummaryAnalog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) and double-gate (DG) SOI MOSFETs is examined via extensive 3D device simulations. Well-designed DG MOSFETs attain higher values of cut-off frequency for both lower and higher drain currents, whereas triple-gate (TG) FinFETs offer higher intrinsic gain while compromising cut-off frequency. For longer channel lengths, SG MOSFETs show slightly higher cut-off frequency in comparison to multi-gate (MG) MOSFETs, whereas MG MOSFETs exhibit higher cut-off frequency for lower channel lengths. A unique figure of merit, gain transconductance frequency product (GTFP) for best trade-off among gain, transconductance, and speed is compared. Double-gate MOSFETs exhibit higher GTFP over a wide range of device scaling, thus remain a good candidate for analog/RF applications. Furthermore, the RF linearity performance of these devices has been examined.en
Type of ItemPeer-Reviewed Journal Publicationen
Type of ItemΔημοσίευση σε Περιοδικό με Κριτέςel
Date of Item2018-10-12-
Date of Publication2016-
SubjectAnalog/RF performanceen
SubjectATLAS device simulatoren
SubjectMulti-gate MOSFETsen
Bibliographic CitationR. K. Sharma, C. A. Dimitriadis and M. Bucher, "A comprehensive analysis of nanoscale single- and multi-gate MOSFETs," Microelectr. J., vol. 52, pp. 66-72, Jun. 2016. doi: 10.1016/j.mejo.2016.03.004en