Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
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| URI: | http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242 | ||
| Έτος | 2016 | ||
| Τύπος | Πλήρης Δημοσίευση σε Συνέδριο | ||
| Άδεια Χρήσης |
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| Βιβλιογραφική Αναφορά | K. Zekentes, K. Vassilevski, A. Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis, E. Vassakis, H. Peyre, N. Makris, M. Bucher, P. Schmid, D. Stefanakis, and D. Tassis, "Modelling of 4H-SiC VJFETS with self-aligned contacts," in 16th International Conference on Silicon Carbide and Related Materials, 2016, pp. 913-916. doi: 10.4028/www.scientific.net/MSF.858.913 https://doi.org/10.4028/www.scientific.net/MSF.858.913 | ||
| Εμφανίζεται στις Συλλογές |
Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtained on a series of fabricated self-aligned devices with two different channel lengths (0.3 and 1.1μm) and various channel widths (1.5, 2, 2.5, 3, 4 and 5 μm). For all the considered models I-V and C-V characteristics could be satisfactorily simulated.
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