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Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/8300B063-A1AA-4DBB-BD64-AFD31642A8FC | ||
| Year | 2018 | ||
| Type of Item | Conference Full Paper | ||
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| Bibliographic Citation | A. Nikolaou, M. Bucher, N. Makris, A. Papadopoulou, L. Chevas, G. Borghello, H. D. Koch and F. Faccio, "Modeling of high total ionizing dose (TID) effects for enclosed layout transistors in 65 nm bulk CMOS," in 41st International Semiconductor Conference, 2018, pp. 133-136. doi: 10.1109/SMICND.2018.8539806 https://doi.org/10.1109/SMICND.2018.8539806 | ||
| Appears in Collections |
High doses of ionizing radiation drastically impair the electrical performance of CMOS technology. Enclosed gate layout remains an effective means to reduce this impact. Nevertheless, high total ionizing dose (TID) effects remain strong. The paper presents an effective approach to analytically model high TID effects in both NMOS and PMOS transistors with enclosed-gate layout in 65 nm commercial CMOS.
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