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Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS

Chevas Loukas, Nikolaou Aristeidis, Bucher Matthias, Makris Nikolaos, Papadopoulou Alexia, Zografos Apostolos, Borghello Giulio, Koch Henri D., Faccio Federico

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URIhttp://purl.tuc.gr/dl/dias/26226CA0-D138-4FCF-A9EB-7AE390F14254-
Identifierhttps://doi.org/10.23919/MIXDES.2018.8436809-
Identifierhttps://ieeexplore.ieee.org/document/8436809-
Languageen-
Extent6 pagesen
TitleInvestigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOSen
CreatorChevas Loukasen
CreatorΧεβας Λουκαςel
CreatorNikolaou Aristeidisen
CreatorΝικολαου Αριστειδηςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorPapadopoulou Alexiaen
CreatorΠαπαδοπουλου Αλεξιαel
CreatorZografos Apostolosen
CreatorΖωγραφος Αποστολοςel
CreatorBorghello Giulioen
CreatorKoch Henri D.en
CreatorFaccio Federicoen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryTen-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated at high TID is investigated. Experiments are carried out for TID of 100, 200 and up to 500 Mrad(SiO2) and at -30°C, 0°C, and 25°C. We find that parameters are least degraded at -30°C. However, short-channel NMOSTs show a significant degradation of slope factor, which is more severe at 0°C than at 25°C. In contrast, the slope factor in short-channel PMOSTs shows lowest sensitivity to high TID.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2019-06-19-
Date of Publication2018-
SubjectAnalog parameteren
SubjectHigh Luminosity-Large Hadron Collideren
SubjectIonizing radiationen
SubjectMOSFETen
SubjectTotal ionizing dose (TID)en
Bibliographic CitationL. Chevas, A. Nikolaou, M. Bucher, N. Makris, A. Papadopoulou, A. Zografos, G. Borghello, H. D. Koch and E. Faccio, "Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS" in 25th International Conference "Mixed Design of Integrated Circuits and Systems", 2018, pp. 313-318. doi: 10.23919/MIXDES.2018.8436809 en

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