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Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/8359EE6E-3589-4084-809F-B31E5F50142D | - |
| Identifier | https://doi.org/10.1109/TED.2018.2838090 | - |
| Identifier | https://ieeexplore.ieee.org/document/8374091 | - |
| Language | en | - |
| Extent | 6 pages | en |
| Title | Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances | en |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Jazaeri, Farzan 1984- | en |
| Creator | Sallese, Jean-Michel 1964- | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | A compact model for the dynamic operation of double-gate junction field-effect transistors is established in this paper. Analytical model expressions are developed for the total node charges and transcapacitances valid from subthreshold to above threshold and from linear to saturation operation. The model is shown to conserve symmetry among source and drain, and circumvents problems at zero drain-to-source bias. | en |
| Type of Item | Peer-Reviewed Journal Publication | en |
| Type of Item | Δημοσίευση σε Περιοδικό με Κριτές | el |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2019-09-02 | - |
| Date of Publication | 2018 | - |
| Subject | Analytical model | en |
| Subject | Circuit simulation | en |
| Subject | Dynamic model | en |
| Subject | High frequency | en |
| Subject | Junction field-effect transistor (JFET) | en |
| Subject | Transcapacitance | en |
| Bibliographic Citation | N. Makris, F. Jazaeri, J.-M. Sallese and M. Bucher, "Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2751-2756, July 2018. doi: 10.1109/TED.2018.2838090 | en |
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