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Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout

Bucher Matthias, Nikolaou Aristeidis, Papadopoulou Alexia, Makris Nikolaos, Chevas Loukas, Borghello Giulio, Koch Henri D., Faccio Federico

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URI: http://purl.tuc.gr/dl/dias/8841AE2A-55D0-4528-BA95-4D4F867B038C
Έτος 2018
Τύπος Πλήρης Δημοσίευση σε Συνέδριο
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Βιβλιογραφική Αναφορά M. Bucher, A. Nikolaou, A. Papadopoulou, N. Makris, L. Chevas, G. Borghello, H.D. Koch and F. Faccio, "Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout," in IEEE International Conference on Microelectronic Test Structures, 2018, pp. 166-170. doi: 10.1109/ICMTS.2018.8383790 https://doi.org/10.1109/ICMTS.2018.8383790
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Περίληψη

High doses of ionizing irradiation cause significant shifts in design parameters of standard bulk silicon CMOS. Analog performance of a commercial 65 nm CMOS technology is examined for standard and enclosed gate layouts, with Total Ionizing Dose (TID) up to 500 Mrad(SiO2). The paper provides insight into geometrical and bias dependence of key design parameters such as threshold voltage, DIBL, transconductance efficiency, slope factor, and intrinsic gain. A modeling approach for an efficient representation of saturation transfer characteristics under TID from weak through moderate and strong inversion and over channel length is discussed.

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