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Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/8841AE2A-55D0-4528-BA95-4D4F867B038C | - |
| Identifier | https://doi.org/10.1109/ICMTS.2018.8383790 | - |
| Identifier | https://ieeexplore.ieee.org/document/8383790 | - |
| Language | en | - |
| Extent | 5 pages | en |
| Title | Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Nikolaou Aristeidis | en |
| Creator | Νικολαου Αριστειδης | el |
| Creator | Papadopoulou Alexia | en |
| Creator | Παπαδοπουλου Αλεξια | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Chevas Loukas | en |
| Creator | Χεβας Λουκας | el |
| Creator | Borghello Giulio | en |
| Creator | Koch Henri D. | en |
| Creator | Faccio Federico | en |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | High doses of ionizing irradiation cause significant shifts in design parameters of standard bulk silicon CMOS. Analog performance of a commercial 65 nm CMOS technology is examined for standard and enclosed gate layouts, with Total Ionizing Dose (TID) up to 500 Mrad(SiO2). The paper provides insight into geometrical and bias dependence of key design parameters such as threshold voltage, DIBL, transconductance efficiency, slope factor, and intrinsic gain. A modeling approach for an efficient representation of saturation transfer characteristics under TID from weak through moderate and strong inversion and over channel length is discussed. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2019-09-06 | - |
| Date of Publication | 2018 | - |
| Subject | Analog parameters | en |
| Subject | Enclosed layout | en |
| Subject | Modeling | en |
| Subject | MOSFET | en |
| Subject | Parameter extraction | en |
| Subject | Radiation hardness | en |
| Subject | Total ionizing dose | en |
| Bibliographic Citation | M. Bucher, A. Nikolaou, A. Papadopoulou, N. Makris, L. Chevas, G. Borghello, H.D. Koch and F. Faccio, "Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout," in IEEE International Conference on Microelectronic Test Structures, 2018, pp. 166-170. doi: 10.1109/ICMTS.2018.8383790 | en |
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