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Study of enclosed gate N-Type MOS field effect transistors – characterization and variability

Diamantis Christos

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Summary

MOSFETs are by far the most commonly used transistor s in digital circuits, as millions of them may be included in a memory chip or a microprocessor. Since they can be made with either P type or N type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.Being such an essential part of micro electronics, different types of MOSFETS need to be studied in order to find the optimal for each need of the industry. T ransistors with enclosed gate layouts seem to be the optimal solution for applications in radiation hard environments since due to their geometryand the absence of STI corners, there is no possible leakage current path along the edge of the active area.In this thesis we study enclosed gate N type MOS Field Effect Transistors. Specifically, we study the voltage current relation, the transconductance , the threshold voltage, the electron mobility, the slope factor. These char acteristics are the result of an experimental measurement procedure. The characteristics above have been extracted from seven transistors with different geometry each with a different channel length and width. Τhe study covers both linear and saturation mode s of operation.Furthermore, matching properties, for different electrical characteristics of transistors with the same geometry, have been extracted, in view of using enclosed gate transistors in analog integrated electronics.

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