Institutional Repository
Technical University of Crete
Technical University of Crete
EN
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EL
| URI: | http://purl.tuc.gr/dl/dias/15E40951-8CD8-4825-9637-7B98DEF113C4 | ||
| Year | 2019 | ||
| Type of Item | Conference Full Paper | ||
| License |
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| Bibliographic Citation | N. Makris, L. Chevas and M. Bucher, "Compact modeling of low frequency noise and thermal noise in junction field effect transistors," in 49th European Solid-State Device Research Conference, 2019, pp. 198-201. doi: 10.1109/ESSDERC.2019.8901775 https://doi.org/10.1109/ESSDERC.2019.8901775 | ||
| Appears in Collections |
This paper presents a novel charge-based approach to modeling bias-dependent noise in junction field-effect transistors (JFETs). Low frequency noise as well as thermal noise aspects are modeled within the recent charge-based model of the double-gate (DG) JFET. For low frequency noise, mobility fluctuations according to the Hooge model is addressed. Thermal noise is expressed within the charge-based modeling approach. The models are validated with respect to TCAD simulations and show correct dependence over a range of gate and drain bias. A custom setup for low frequency noise measurement of JFETs is described. Noise measurements of n-JFETs are discussed, and the compact model is compared with the measurement.
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