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Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/031B8C04-E832-4A91-A846-FCF577B29607 | ||
| Year | 2019 | ||
| Type of Item | Conference Full Paper | ||
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| Bibliographic Citation | A. Nikolaou, L. Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello and F. Faccio, "Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose," in 26th International Conference "Mixed Design of Integrated Circuits and Systems", 2019, pp. 306-309. doi: 10.23919/MIXDES.2019.8787098 https://doi.org/10.23919/MIXDES.2019.8787098 | ||
| Appears in Collections |
Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.
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