| URI | http://purl.tuc.gr/dl/dias/A6E0B132-D61B-47A2-AC9A-E198D4801E88 | - |
| Identifier | https://doi.org/10.1109/MOCAST.2019.8742031 | - |
| Identifier | https://ieeexplore.ieee.org/abstract/document/8742031 | - |
| Language | en | - |
| Extent | 4 pages | en |
| Title | Design of micropower operational transconductance amplifiers for high total ionizing dose effects | en |
| Creator | Papadopoulou Alexia | en |
| Creator | Παπαδοπουλου Αλεξια | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Chevas Loukas | en |
| Creator | Χεβας Λουκας | el |
| Creator | Nikolaou Aristeidis | en |
| Creator | Νικολαου Αριστειδης | el |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | The design of radiation-hard analog/mixed signal Integrated Circuits for high Total Ionizing Dose (TID) is a challenging task. Front-end electronics for the High-Luminosity Large Hadron Collider (HL-LHC) are expected to be exposed to doses exceeding 500 Mrad(SiO2). Using a recently developed TID-Process Design Kit (PDK) in 65 nm bulk CMOS, the present paper illustrates the design of micropower, current-mirror and folded cascode CMOS Operational Transconductance Amplifiers (OTAs) using moderate inversion techniques to favor insensitivity to high TID. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2020-06-10 | - |
| Date of Publication | 2019 | - |
| Subject | High-Luminosity Large Hadron Collider | en |
| Subject | Integrated Circuit | en |
| Subject | Low Power | en |
| Subject | Moderate Inversion | en |
| Subject | Operational Transconductance Amplifier | en |
| Subject | Radiation Hardness | en |
| Subject | Total Ionizing Dose | en |
| Bibliographic Citation | A. Papadopoulou, N. Makris, L. Chevas, A. Nikolaou and M. Bucher, "Design of micropower operational transconductance amplifiers for high total ionizing dose effects," in 8th International Conference on Modern Circuits and Systems Technologies, 2019. doi: 10.1109/MOCAST.2019.8742031 | en |