Institutional Repository
Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/B5CBFC4B-BBD5-413C-92F7-C65A02FF2987 | ||
| Year | 2021 | ||
| Type of Item | Diploma Work | ||
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| Bibliographic Citation | Antonios Antonakakis, "Analytical method of parameter determination and application to advanced CMOS technology", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2021 https://doi.org/10.26233/heallink.tuc.89090 | ||
| Appears in Collections |
In this Thesis we’re studying the analytical methods of compact modeling of single-gate silicon MOSFETs, as well as the analytical methods for determining the parameters of these models at advanced CMOS technology. This process is based on experimental measurements made in the Electronics Laboratory on samples of three different generations of CMOS technology 110nm, 250nm and 1um and includes transistors of both NMOS and PMOS type, with particular emphasis on channel length coverage (long, medium, short). We’re also studying the performance of technologies in a unified way, while using size normalization techniques (current, conductivity), so that the effect of different channel lengths is easily perceived. The phenomenon of velocity saturation has a special significance in this comparison. Parameter extraction methods are also applied. These methods apply in the same way to each technology and each channel length and are presented in the form of tables, with the aim of compact modeling. Finally, the charge-based model of the MOS transistor with the velocity saturation phenomenon is implemented and the diagrams are presented in contrast to our data.
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