Institutional Repository
Technical University of Crete
Technical University of Crete
EN
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| URI: | http://purl.tuc.gr/dl/dias/13C48D7D-265E-4841-BCCA-3D562C54C83A | ||
| Year | 2021 | ||
| Type of Item | Master Thesis | ||
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| Bibliographic Citation | Loukas Chevas, "Characterization and compact modeling of low frequency noise and ionizing radiation effects in bulk silicon MOSFETs", Master Thesis, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2021 https://doi.org/10.26233/heallink.tuc.89855 | ||
| Appears in Collections |
Two challenging fields of semiconductor applications are the field of high-energy physics experiments, as a hostile operating environment for deep sub-micron MOSFETs and the field of high-precision, low-noise analog design with its requirements for detailed and accurate MOSFET noise models.An analysis is presented on MOS devices irradiated to ultrahigh radiation doses, as part of the viability study conducted at CERN in cooperation with TUC for the upcoming LHC upgrade due in 2025-2027. Our part was to analyze, characterize and model the damage inflicted on a specific commercially available 65nm bulk CMOS technology, in order to allow designers at CERN to properly use it for the predicted ten year lifespan of the experiment. To this end, we have presented in this work selected operational parameters of interest to designers, which were extracted for both MOS polarities, multiple VTH device types, at three different temperatures, down to -30° C, at four different irradiation levels, up to 500Mrad. Multiple device geometries were studied and are presented.Furthermore, measurements and analysis of the noise response of a commercially available 110nm bulk CMOS technology is demonstrated. The system and methodology for on-wafer noise measurements is presented along with our efforts in extracting and analyzing usable data from our measurements. The EKV3 parameter extraction approach using the two distinct incorporated noise models is also described. Our resulting measurements are presented for the three different MOS polarities provided for this task. Output as well as input referred noise spectra are presented, fitted with an analytical flicker noise model.
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