Institutional Repository
Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/F5C955D4-9356-4680-A972-99DE10D0ECC9 | - |
| Identifier | https://doi.org/10.4028/www.scientific.net/MSF.963.683 | - |
| Identifier | https://www.scientific.net/MSF.963.683 | - |
| Language | en | - |
| Extent | 5 pages | en |
| Title | Compact modeling of SIC and gan junction FETS at high temperature | en |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Zekentes, Konstantinos | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Publisher | Trans Tech Publications | en |
| Content Summary | High temperatures and other harsh environments are domains of predilection for Junction FETs, particularly when wide band-gap semiconductors such as SiC or GaN are used. The present work describes the new compact model of double-gate (DG) JFETs which is compared to TCAD simulations of SiC and GaN JFETs over a wide temperature range up to 500ºC. The compact model is shown to be predictive of device behavior, for static (current-voltage) as well as dynamic (capacitance-voltage) behavior of long-channel DG JFETs. | en |
| Type of Item | Peer-Reviewed Journal Publication | en |
| Type of Item | Δημοσίευση σε Περιοδικό με Κριτές | el |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2020-10-27 | - |
| Date of Publication | 2019 | - |
| Subject | Capacitances | en |
| Subject | Compact model | en |
| Subject | Gallium Nitride | en |
| Subject | High temperature | en |
| Subject | JFET | en |
| Subject | Junction FET | en |
| Subject | On resistance | en |
| Subject | Parameter extraction | en |
| Subject | Silicon Carbide | en |
| Subject | Wide-bandgap | en |
| Bibliographic Citation | N. Makris, K. Zekentes and M. Bucher, “Compact modeling of SiC and GaN junction FETs at high temperature,” Mater. Sci. Forum, vol. 963, pp. 683–687, Jul. 2019. https://doi.org/10.4028/www.scientific.net/msf.963.683 | en |
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