Institutional Repository
Technical University of Crete
Technical University of Crete
EN
|
EL
| URI: | http://purl.tuc.gr/dl/dias/8C751A60-2C73-4922-A2F2-6E38608D9356 | ||
| Year | 2017 | ||
| Type of Item | Conference Full Paper | ||
| License |
|
||
| Bibliographic Citation | N. Mavredakis, M. Bucher, P. Habas, A. Acovic and R. Meyer, "Statistical compact modeling of low frequency noise in buried-channel, native, and standard MOSFETs," in International Conference on Noise and Fluctuations, 2017. doi: 10.1109/ICNF.2017.7985942 https://doi.org/10.1109/ICNF.2017.7985942 | ||
| Appears in Collections |
In this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated with excellent results. More specifically, it covers the increase of noise deviation in weak inversion and generally its strong bias-dependence in larger devices while it also gives consistent results regarding the scaling of LFN variability.
Copyright © DIAS 2013
