Institutional Repository
Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/52BED836-8BC8-476D-BB33-D94EA624EDD9 | ||
| Year | 2016 | ||
| Type of Item | Peer-Reviewed Journal Publication | ||
| License |
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| Bibliographic Citation | R. K. Sharma, C. A. Dimitriadis and M. Bucher, "A comprehensive analysis of nanoscale single- and multi-gate MOSFETs," Microelectr. J., vol. 52, pp. 66-72, Jun. 2016. doi: 10.1016/j.mejo.2016.03.004 https://doi.org/10.1016/j.mejo.2016.03.004 | ||
| Appears in Collections |
Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) and double-gate (DG) SOI MOSFETs is examined via extensive 3D device simulations. Well-designed DG MOSFETs attain higher values of cut-off frequency for both lower and higher drain currents, whereas triple-gate (TG) FinFETs offer higher intrinsic gain while compromising cut-off frequency. For longer channel lengths, SG MOSFETs show slightly higher cut-off frequency in comparison to multi-gate (MG) MOSFETs, whereas MG MOSFETs exhibit higher cut-off frequency for lower channel lengths. A unique figure of merit, gain transconductance frequency product (GTFP) for best trade-off among gain, transconductance, and speed is compared. Double-gate MOSFETs exhibit higher GTFP over a wide range of device scaling, thus remain a good candidate for analog/RF applications. Furthermore, the RF linearity performance of these devices has been examined.
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