Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
EN
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EL
| URI: | http://purl.tuc.gr/dl/dias/8359EE6E-3589-4084-809F-B31E5F50142D | ||
| Έτος | 2018 | ||
| Τύπος | Δημοσίευση σε Περιοδικό με Κριτές | ||
| Άδεια Χρήσης |
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| Βιβλιογραφική Αναφορά | N. Makris, F. Jazaeri, J.-M. Sallese and M. Bucher, "Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2751-2756, July 2018. doi: 10.1109/TED.2018.2838090 https://doi.org/10.1109/TED.2018.2838090 | ||
| Εμφανίζεται στις Συλλογές |
A compact model for the dynamic operation of double-gate junction field-effect transistors is established in this paper. Analytical model expressions are developed for the total node charges and transcapacitances valid from subthreshold to above threshold and from linear to saturation operation. The model is shown to conserve symmetry among source and drain, and circumvents problems at zero drain-to-source bias.
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