Institutional Repository
Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/8359EE6E-3589-4084-809F-B31E5F50142D | ||
| Year | 2018 | ||
| Type of Item | Peer-Reviewed Journal Publication | ||
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| Bibliographic Citation | N. Makris, F. Jazaeri, J.-M. Sallese and M. Bucher, "Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2751-2756, July 2018. doi: 10.1109/TED.2018.2838090 https://doi.org/10.1109/TED.2018.2838090 | ||
| Appears in Collections |
A compact model for the dynamic operation of double-gate junction field-effect transistors is established in this paper. Analytical model expressions are developed for the total node charges and transcapacitances valid from subthreshold to above threshold and from linear to saturation operation. The model is shown to conserve symmetry among source and drain, and circumvents problems at zero drain-to-source bias.
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