Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
EN
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| URI: | http://purl.tuc.gr/dl/dias/576B5055-1E83-4A88-8EDD-B5F1FB6B3BA9 | ||
| Έτος | 2020 | ||
| Τύπος | Δημοσίευση σε Περιοδικό με Κριτές | ||
| Άδεια Χρήσης |
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| Βιβλιογραφική Αναφορά | M. Bucher, N. Makris and L. Chevas, “Generalized constant current method for determining MOSFET threshold voltage”, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4559–4562, Nov. 2020. doi: 10.1109/TED.2020.3019019 https://doi.org/10.1109/TED.2020.3019019 | ||
| Εμφανίζεται στις Συλλογές |
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).
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