Ιδρυματικό Αποθετήριο
Πολυτεχνείο Κρήτης
Πολυτεχνείο Κρήτης
EN
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| URI: | http://purl.tuc.gr/dl/dias/8F1E4B59-F111-4EAD-AF60-E7B3B77159FA | ||
| Έτος | 2020 | ||
| Τύπος | Δημοσίευση σε Περιοδικό με Κριτές | ||
| Άδεια Χρήσης |
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| Βιβλιογραφική Αναφορά | N. Makris, M. Bucher, L. Chevas, F. Jazaeri and J.-M. Sallese, “Free carrier mobility, series resistance, and threshold voltage extraction in junction FETs,” IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4658–4661, Nov. 2020. doi: 10.1109/TED.2020.3025841 https://doi.org/10.1109/TED.2020.3025841 | ||
| Εμφανίζεται στις Συλλογές |
In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method for MOSFETs, is developed. The same method is then extended to cover also the case when series resistance is present, while series resistance itself may be determined from the measurement from two FETs with different channel lengths. The key technological and design parameter is the threshold voltage, which may be unambiguously determined from the transconductance-to-current ratio with a constant-current method. The new methods are shown to be effective over a wide range of technical parameters, using technology computer-aided design simulations.
Copyright © DIAS 2013
